MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 45

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Partial-Array Self Refresh
Output Drive Strength
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
For further power savings during self refresh, the partial-array self refresh (PASR) fea-
ture enables the controller to select the amount of memory to be refreshed during self
refresh. The refresh options are:
• Full array: banks 0, 1, 2, and 3
• One-half array: banks 0 and 1
• One-quarter array: bank 0
• One-eighth array: bank 0 with row address most significant bit (MSB) = 0
• One-sixteenth array: bank 0 with row address MSB = 0 and row address MSB - 1 = 0
READ and WRITE commands can still be issued to any bank selected during standard
operation, but only the selected banks or segments of a bank in PASR are refreshed dur-
ing self refresh. It is important to note that data in unused banks or portions of banks is
lost when PASR is used.
Because the device is designed for use in smaller systems that are typically point-to-
point connections, an option to control the drive strength of the output buffers is
provided. Drive strength should be selected based on the expected loading of the mem-
ory bus. There are four supported settings for the output drivers: 25Ω, 37Ω, 55Ω, and
80Ω internal impedance. These are full, three-quarter, one-half, and one-quarter drive
strengths, respectively.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
45
Micron Technology, Inc. reserves the right to change products or specifications without notice.
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