MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 20

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MT48H8M16LFB4-75:K

Manufacturer Part Number
MT48H8M16LFB4-75:K
Description
DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Series
-r
Datasheet

Specifications of MT48H8M16LFB4-75:K

Package
54VFBGA
Density
128 Mb
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
54-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H8M16LFB4-75:K
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48H8M16LFB4-75:K
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H8M16LFB4-75:K TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Electrical Specifications – AC Operating Conditions
Table 10: Electrical Characteristics and Recommended AC Operating Conditions
Notes 1–5 apply to all parameters and conditions
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Parameter
Access time from CLK (positive edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
CS#, RAS#, CAS#, WE#, DQM hold time
CS#, RAS#, CAS#, WE#, DQM setup time
Data-in hold time
Data-in setup time
Data-out High-Z time
Data-out Low-Z time
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE-to-PRECHARGE command
ACTIVE-to-ACTIVE command period
ACTIVE-to-READ or WRITE delay
Refresh period
AUTO REFRESH period
PRECHARGE command period
ACTIVE bank a to ACTIVE bank b command
Transition time
WRITE recovery time
Exit SELF REFRESH-to-ACTIVE command
Electrical Specifications – AC Operating Conditions
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
Symbol
20
t
t
t
t
t
t
t
t
CMH
t
t
t
t
t
CKH
CMS
t
t
OHn
t
t
RCD
RRD
t
t
CKS
t
t
RAS
t
t
XSR
t
t
REF
RFC
OH
WR
AH
DH
AC
CH
CK
HZ
AS
DS
RC
RP
t
CL
LZ
T
Min
Micron Technology, Inc. reserves the right to change products or specifications without notice.
120
1.5
2.5
2.5
9.6
1.5
0.5
1.5
1.5
2.5
1.8
0.3
42
60
18
80
18
15
1
6
1
1
1
2
-6
120,000
Max
1.2
64
5
8
5
8
Min
67.5
19.2
19.2
120
1.5
2.5
2.5
7.5
9.6
1.5
0.5
1.5
1.5
2.5
1.8
0.3
45
80
15
1
1
1
1
2
-75
©2008 Micron Technology, Inc. All rights reserved.
120,000
Max
5.4
5.4
1.2
64
8
8
Unit
t
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
ns
ns
ns
Notes
10
11
6
7
8
9

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