MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 16

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MT48H8M16LFB4-75:K

Manufacturer Part Number
MT48H8M16LFB4-75:K
Description
DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
Manufacturer
Micron Technology Inc
Type
Mobile SDRAMr
Series
-r
Datasheet

Specifications of MT48H8M16LFB4-75:K

Package
54VFBGA
Density
128 Mb
Address Bus Width
14 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
133 MHz
Maximum Random Access Time
8|5.4 ns
Operating Temperature
0 to 70 °C
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
128M (8Mx16)
Speed
132MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Package / Case
54-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT48H8M16LFB4-75:K
Manufacturer:
MICRON
Quantity:
4 000
Part Number:
MT48H8M16LFB4-75:K
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT48H8M16LFB4-75:K TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 6: Capacitance
Note 1 applies to all parameters and conditions
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Parameter
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQ
Note:
1. This parameter is sampled. V
= 1 MHz.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
16
DD
, V
Symbol
DDQ
C
C
C
L1
L2
L0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= +1.8V; TA = 25˚C; ball under test biased at 0.9V, f
Min
1.5
1.5
3
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
Max
4.0
4.0
5.0
Unit
pF
pF
pF

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