MT48H8M16LFB4-75:K Micron Technology Inc, MT48H8M16LFB4-75:K Datasheet - Page 16

• Manufacturer Part Number: MT48H8M16LFB4-75:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 1.8V 54-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr
• Series: -r

Specifications of MT48H8M16LFB4-75:K

• Package: 54VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 132MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Table 6: Capacitance
Note 1 applies to all parameters and conditions
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Parameter
Input capacitance: CLK
Input capacitance: All other input-only balls
Input/output capacitance: DQ
Note:
1. This parameter is sampled. V
= 1 MHz.
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
16
DD
, V
Symbol
DDQ
C
C
C
L1
L2
L0
Micron Technology, Inc. reserves the right to change products or specifications without notice.
= +1.8V; TA = 25˚C; ball under test biased at 0.9V, f
Min
1.5
1.5
3
Electrical Specifications
©2008 Micron Technology, Inc. All rights reserved.
Max
4.0
4.0
5.0
Unit
pF
pF
pF