MCP1631RD-MCC2 Microchip Technology, MCP1631RD-MCC2 Datasheet - Page 117
![REFERENCE DESIGN MCP1631HV](/photos/9/4/90424/mcp1631rd-mcc2_sml.jpg)
MCP1631RD-MCC2
Manufacturer Part Number
MCP1631RD-MCC2
Description
REFERENCE DESIGN MCP1631HV
Manufacturer
Microchip Technology
Datasheets
1.MCP1631VHVT-330EST.pdf
(34 pages)
2.MCP1631HV-330EST.pdf
(54 pages)
3.MCP1631RD-MCC2.pdf
(20 pages)
4.MCP1631RD-MCC2.pdf
(328 pages)
Specifications of MCP1631RD-MCC2
Main Purpose
Power Management, Battery Charger
Embedded
Yes, MCU, 8-Bit
Utilized Ic / Part
MCP1631HV, PIC16F883
Primary Attributes
1 ~ 2 Cell- Li-Ion, 1 ~ 5 Cell- NiCd/NiMH, 1 ~ 2 1W LEDs
Secondary Attributes
Status LEDs
Silicon Manufacturer
Microchip
Application Sub Type
Battery Charger
Kit Application Type
Power Management - Battery
Silicon Core Number
MCP1631HV, PIC16F883
Kit Contents
Board
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
- MCP1631VHVT-330EST PDF datasheet
- MCP1631HV-330EST PDF datasheet #2
- MCP1631RD-MCC2 PDF datasheet #3
- MCP1631RD-MCC2 PDF datasheet #4
- Current page: 117 of 328
- Download datasheet (6Mb)
10.1.4
To read a program memory location, the user must
write the Least and Most Significant address bits to the
EEADR and EEADRH registers, set the EEPGD con-
trol bit of the EECON1 register, and then set control bit
RD. Once the read control bit is set, the program mem-
ory Flash controller will use the second instruction
cycle to read the data. This causes the second instruc-
tion immediately following the “BSF
instruction to be ignored. The data is available in the
very next cycle, in the EEDAT and EEDATH registers;
therefore, it can be read as two bytes in the following
instructions.
EXAMPLE 10-3:
© 2009 Microchip Technology Inc.
;
;
BANKSEL EEADR
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL EECON1
BSF
BSF
NOP
NOP
BANKSEL EEDAT
MOVF
MOVWF
MOVF
MOVWF
BCF
READING THE FLASH PROGRAM
MEMORY
MS_PROG_EE_ADDR
EEADRH
LS_PROG_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, RD
EEDAT, W
LOWPMBYTE
EEDATH, W
HIGHPMBYTE
STATUS, RP1
FLASH PROGRAM READ
EECON1,RD”
;
;
;MS Byte of Program Address to read
;
;LS Byte of Program Address to read
;
;Point to PROGRAM memory
;EE Read
;First instruction after BSF EECON1,RD executes normally
;Any instructions here are ignored as program
;memory is read in second cycle after BSF EECON1,RD
;
;W = LS Byte of Program Memory
;
;W = MS Byte of Program EEDAT
;
;Bank 0
PIC16F882/883/884/886/887
EEDAT and EEDATH registers will hold this value until
another read or until it is written to by the user.
Note 1: The two instructions following a program
2: If the WR bit is set when EEPGD = 1, it
memory read are required to be NOPs.
This prevents the user from executing a
two-cycle
instruction after the RD bit is set.
will be immediately reset to ‘0’ and no
operation will take place.
instruction
DS41291F-page 115
on
the
next
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