LH28F800BJE-PTTL90 Sharp Microelectronics, LH28F800BJE-PTTL90 Datasheet - Page 42

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LH28F800BJE-PTTL90

Manufacturer Part Number
LH28F800BJE-PTTL90
Description
IC FLASH 8MBIT 90NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F800BJE-PTTL90

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8 or 512K x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
425-1821
LHF80J01

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6.2.7 Reset Operations
NOTES:
1. If RP# is asserted while a block erase, full chip erase, word/byte write or lock-bit configuration operation is not executing,
2. A reset time, t
3. When the device power-up, holding RP# low minimum 100ns is required after V
t
t
t
PLPH
PLRZ
2VPH
Sym.
the reset will complete within 100ns.
valid. Refer to AC Characteristics - Read-Only Operations for t
has been in stable there.
RP# Pulse Low Time
RP# Low to Reset during Block Erase, Full Chip Erase,
Word/Byte Write or Lock-Bit Configuration
V
CC
2.7V to RP# High
PHQV
RY/BY#(R)
RY/BY#(R)
RP#(P)
RP#(P)
RP#(P)
(SR.7)
(SR.7)
V
CC
, is required from the later of RY/BY#(SR.7) going High Z("1") or RP# going high until outputs are
High Z
High Z
("0")
("0")
2.7V
("1")
V
("1")
V
V
V
V
V
V
V
V
OL
OL
IH
IH
IH
IL
IL
IL
IL
(B)Reset During Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration
Parameter
Figure 20. AC Waveform for Reset Operation
t
t
PLPH
PLPH
Reset AC Specifications
(A)Reset During Read Array Mode
t
2VPH
t
PLRZ
(C)RP# rising Timing
PHQV
.
Notes
1,2
2,3
2
CC
has been in predefined range and also
Min.
100
100
Max.
30
Rev. 1.27
Unit
ns
µs
ns

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