LH28F800BJE-PTTL90 Sharp Microelectronics, LH28F800BJE-PTTL90 Datasheet - Page 4

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LH28F800BJE-PTTL90

Manufacturer Part Number
LH28F800BJE-PTTL90
Description
IC FLASH 8MBIT 90NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of LH28F800BJE-PTTL90

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8 or 512K x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
425-1821
LHF80J01

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
LH28F800BJE-PTTL90
Manufacturer:
SHARP
Quantity:
1 900
Part Number:
LH28F800BJE-PTTL90
Manufacturer:
SHARP/PBF
Quantity:
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Part Number:
LH28F800BJE-PTTL90
Manufacturer:
SHARP
Quantity:
20 000
■ Low Voltage Operation
■ OTP(One Time Program) Block
■ User-Configurable ×8 or ×16 Operation
■ High-Performance Read Access Time
■ Operating Temperature
■ Low Power Management
■ Optimized Array Blocking Architecture
■ Extended Cycling Capability
The product is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications.
The product can operate at V
realize battery life and suits for cellular phone application.
Its Boot, Parameter and Main-blocked architecture, low voltage and extended cycling provide for highly flexible component
suitable for portable terminals and personal computers. Its enhanced suspend capabilities provide for an ideal solution for code
+ data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to
DRAM, the product offers four levels of protection: absolute protection with V
locking or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
The product is manufactured on SHARP’s 0.25µm ETOX
48-lead TSOP, ideal for board constrained applications.
*ETOX is a trademark of Intel Corporation.
V
3963 word + 4 word Program only array
90ns(V
0°C to +70°C
Typ. 2µA (V
Automatic Power Savings Mode Decreases I
Static Mode
Typ. 120µA (V
Read Current
Two 4K-word (8K-byte) Boot Blocks
Six 4K-word (8K-byte) Parameter Blocks
Fifteen 32K-word (64K-byte) Main Blocks
Top Boot Location
Minimum 100,000 Block Erase Cycles
CC
=V
CC
CCW
=2.7V-3.6V)
=2.7V-3.6V Single Voltage
CC
CC
=3.0V) Standby Current
=3.0V, T
8M-BIT ( 512Kbit ×16 / 1Mbit ×8 )
CC
=2.7V-3.6V and V
A
Boot Block Flash MEMORY
=+25°C, f=32kHz)
LH28F800BJE-PTTL90
CCR
CCW
in
=2.7V-3.6V or 11.7V-12.3V. Its low voltage operation capability
TM*
process technology. It come in industry-standard package: the
■ Enhanced Automated Suspend Options
■ Enhanced Data Protection Features
■ Automated Block Erase, Full Chip Erase,
■ SRAM-Compatible Write Interface
■ Industry-Standard Packaging
■ ETOX
■ CMOS Process (P-type silicon substrate)
■ Not designed or rated as radiation hardened
Word/Byte Write and Lock-Bit Configuration
Word/Byte Write Suspend to Read
Block Erase Suspend to Word/Byte Write
Block Erase Suspend to Read
Absolute Protection with V
Block Erase, Full Chip Erase, Word/Byte Write and
Lock-Bit Configuration Lockout during Power
Transitions
Block Locking with Command and WP#
Permanent Locking
Command User Interface (CUI)
Status Register (SR)
48-Lead TSOP
TM*
Nonvolatile Flash Technology
CCW
≤V
CCWLK
, selective hardware block
CCW
≤V
CCWLK
Rev. 1.27

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