NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 60

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Electrical Characteristics & AC Timing - Absolute Specifications
(0 °C
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Symbol
t
t
t
t
t
t
t
RPRE
t
t
t
t
t
XSNR
XSRD
RPST
t
PDEX
t
WTR
REFI
RAS
t
RFC
RCD
RAP
t
RRD
DAL
WR
RC
RP
T
A
70 C V
Read preamble
Read postamble
Active to Precharge
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command period
Active to Read or Write delay
Active to Read Command with Autoprecharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
Auto precharge write recovery + precharge time
Internal write to read command delay
Power down exit time
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
DDQ
= V
DD
= 2.5V
0.2V (DDR333); V
Parameter
DDQ
= V
DD
= 2.6V
0.1V (DDR400); See AC Characteristics)
(t
RCD
(t
(t
WR
RP
Min
min
200
4.5
2.0
55
65
15
15
12
15
12
75
, t
+
6
/t
/t
CK
CK
DDR400
RAS
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
)
(5T)
)
)
Max
5.5
3.0
7.8
40
(t
RCD
(t
(t
WR
RP
0.40
200
Min
min
0.9
60
72
18
18
12
15
12
75
+
6
, t
/t
(Part 2 of 2)
/t
CK
CK
DDR333
RAS
)
(6K)
)
)
Max
0.60
1.1
7.8
42
Unit
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
s
1-4, 13
Notes
1-4, 8
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
1-4
60