NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 17

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Auto Precharge
Auto Precharge is a feature which performs the same individual-bank precharge function described above, but without requiring
an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction with a specific Read or Write
command. A precharge of the bank/row that is addressed with the Read or Write command is automatically performed upon
completion of the Read or Write burst. Auto Precharge is non-persistent in that it is either enabled or disabled for each individual
Read or Write command. Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. This is
determined as if an explicit Precharge command was issued at the earliest possible time without violating t
must not issue another command to the same bank until the precharge (t
The DDR SDRAM devices supports the optional t
charge to be issued to a bank that has been activated (opened) but has not yet satisfied the t
lockout feature essentially delays the onset of the auto precharge operation until two conditions occur. One, the entire burst
length of data has been successfully prefetched from the memory array; and two, t
As a means to specify whether a DDR SDRAM device supports the t
t
charge). For devices that support the t
Auto Precharge) to be issued to an open bank once t
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most re-cently registered
Read command prior to the Burst Terminate command is truncated, as shown in the Operation section of this data sheet. Write
burst cycles are not to be terminated with the Burst Terminate command.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
t
RAP
RAP
(RAS Command to Read Command with Auto Precharge or better stated Bank Activate to Read Command with Auto Pre-
DQ (BL=2)
DQ (BL=4)
DQ (BL=8)
Command
Command
Command
Definition
The above timing diagrams show the effects of t
with Auto Precharge command (RDA) is issued with t
Bank Activate command (ACT). The internal precharge operation, however, does not begin until after t
CK
CK
NOP
NOP
NOP
ACT
ACT
ACT
t
t
RCDmin
RAPmin
RAS
NOP
NOP
NOP
lockout feature, t
RD A
RD A
RD A
RAS
RAP
t
RASmin
RCD
lockout feature. This feature allows a Read command with Auto Pre-
for devices that support t
RCD
(min) is satisfied.
NOP
NOP
NOP
RAP
(min) and dataout is available with the shortest latency from the
= t
RCD
NOP
NOP
NOP
RAS
DQ0
DQ0
DQ0
(min). This allows any Read Command (with or without
RP
lockout feature, a new parameter has been defined,
DQ1
DQ1
DQ1
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
) is completed.
*
*
NOP
NOP
NOP
RAS
DQ2
DQ2
*
lockout. In these cases, the Read
RAS
Indicates Auto Precharge begins here
DQ3
DQ3
t
t
RPmin
RPmin
NOP
NOP
NOP
*
(min) has been satisfied.
DQ4
RAS
DQ5
t
RPmin
ACT
ACT
NOP
(min) specification. The t
DQ6
RAS
DQ7
(min) is satisfied.
CL=2, t
NOP
NOP
ACT
RAS
CK
(min). The user
=10ns
NOP
NOP
NOP
RAS
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