NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 40

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)
Command
Address
DQS
DM
DQ
1 = These bits are incorrectly written into the memory array if DM is low.
CK
CK
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
t
The Read command masks the last 2 data elements in the burst.
A10 is Low with the Write command (Auto Precharge is disabled).
The Read and Write commands are not necessarily to the same bank.
WTR
is referenced from the first positive CK edge after the last desired data in pair.
BAa, COL b
Write
T1
DI a-b
NOP
T2
t
DQSS
(nom)
NOP
T3
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
1
T4
t
WTR
1
BAa, COL n
Read
T5
CL = 2
NOP
Don’t Care
T6
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