NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 55

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Normal Strength Driver Pullup Characteristics
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will
6. The full variation in the ratio of the “typical” IBIS pullup to “typical” IBIS pulldown current should be unity + 10%, for device
7. These characteristics are intended to obey the SSTL_2 class II standard.
8. This specification is intended for DDR SDRAM only.
drain to source voltages from 0.1 to 1.0.
drain to source voltages from 0.1 to 1.0. This specification is a design objective only. It is not guaranteed.
-200
0
0
V
OUT
(V)
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
2.7
Minimum
Typical Low
Typical High
Maximum
not exceed 1.7, for device
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