NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 52

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
Absolute Maximum Ratings
DQS/DQ/DM Slew Rate
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rat-
ing only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this speci-
fication is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
V
1. Measured between V
2. DQS, DQ, and DM input slew rate is specified to prevent double clocking of data and preserve setup and hold
Symbol
IN
V
T
input slew rate
I
V
, V
V
OUT
DCS/DQ/DM
P
times. Signal transition through the DC region must be monotonic.
DDQ
T
STG
DD
Parameter
IN
A
D
OUT
Voltage on I/O pins relative to V
Voltage on Inputs relative to V
Voltage on V
Voltage on V
Operating Temperature (Ambient)
Storage Temperature (Plastic)
Power Dissipation
Short Circuit Output Current
IH
DD
DDQ
DC
Symbol
(DC), V
supply relative to V
SLEW
supply relative to V
IL
(DC), and V
SS
TBD
Min
SS
Parameter
DDR400
SS
SS
(5T)
IL
(DC), V
TBD
Max
IH
(DC).
TBD
Min
DDR333
(6K)
TBD
Max
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
V/ns
Unit
0.5 to V
0.5 to 3.6
0.5 to 3.6
0.5 to 3.6
55 to 150
0 to 70
Rating
Notes
1.0
50
1, 2
DDQ
0.5
Units
mA
W
V
V
V
V
C
C
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