NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 29

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Read to Precharge: CAS Latencies (Burst Length = 4 or 8)
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK
CK
CK
CK
DO a-n = data out from bank a, column n.
Cases shown are either uninterrupted bursts of 4 or interrupted bursts of 8.
3 subsequent elements of data out appear in the programmed order following DO a-n.
Shown with nominal t
BA a, COL n
BA a, COL n
Read
Read
AC
, t
DQSCK
, and t
CL=2
NOP
NOP
DQSQ
CL=2.5
.
BA a or all
BA a or all
PRE
PRE
DOa-n
DOa-n
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
NOP
NOP
t
t
RP
RP
NOP
NOP
CAS Latency = 2.5
CAS Latency = 2
BA a, ROW
BA a, ROW
Don’t Care
ACT
ACT
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