NT5DS16M16CS NANOAMP [NanoAmp Solutions, Inc.], NT5DS16M16CS Datasheet - Page 36

• Manufacturer Part Number: NT5DS16M16CS
• Description: 256Mb DDR Synchronous DRAM
• Manufacturer: NANOAMP [NanoAmp Solutions, Inc.]

NanoAmp Solutions, Inc.
DOC # 14-02-044 Rev A ECN # 01-1116
The specifications of this device are subject to change without notice. For latest documentation, see http://www.nanoamp.com
Random Write Cycles (Burst Length = 2, 4 or 8)
Command
Command
Address
Address
DQS
DQS
DI a-b, etc. = data in for bank a, column b, etc.
b', etc. = odd or even complement of b, etc. (i.e., column address LSB inverted).
Each Write command may be to any bank.
DM
DM
DQ
DQ
CK
CK
CK
CK
BAa, COL b
BAa, COL b
Write
Write
T1
T1
t
DQSS
t
DQSS
(min)
DI a-b
(max)
BAa, COL x
BAa, COL x
Write
Write
T2
T2
DI a-b’
DI a-b
DI a-b’
DI a-x
BAa, COL n
BAa, COL n
Write
Write
T3
T3
DI a-x’
DI a-x
NT5DS64M4CT, NT5DS32M8CT, NT5DS16M16CT
NT5DS64M4CS, NT5DS32M8CS, NT5DS16M16CS
DI a-n
DI a-x’
BAa, COL a
BAa, COL a
Write
Write
T4
T4
DI a-n
DI a-n’
DI a-n’
Maximum D
Minimum D
DI a-a
BAa, COL g
BAa, COL g
Write
Write
T5
T5
DI a-a
DI a-a’
QSS
Don’t Care
QSS
DI a-a’
DI a-g
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