MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 65

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MT29F1G08ABBHC-ET

Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet

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Figure 58:
Figure 59:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
R/B#
I/Ox
CE#
ALE
RE#
CLE
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
INPUT command
SERIAL DATA
t WC
80h
INPUT command
SERIAL DATA
PROGRAM PAGE Operation
PROGRAM PAGE Operation with RANDOM DATA INPUT
80h
add 1
t WC
Col
add 2
Col
add 1
add 1
Col
Row
add 2
Row
add 2
Col
t ADL
D
N
Serial input
IN
add 1
Row
N+1
D
IN
add 2
Row
INPUT command
RANDOM DATA
x16 device: m = 1,056 words
x8 device: m = 2,112 bytes
t ADL
85h
1 up to m Byte
D
N
serial input
IN
65
Column address
add 1
Col
D
add 2
M
Col
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t ADL
PROGRAM
command
D
10h
N
1Gb: x8, x16 NAND Flash Memory
IN
Serial input
t WB
t PROG
N+1
D
IN
PROGRAM
command
10h
t WB
READ STATUS
©2006 Micron Technology, Inc. All rights reserved.
command
t PROG
70h
Timing Diagrams
READ STATUS
command
70h
Don‘t Care
Don‘t Care
Status
Status

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