MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 36

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MT29F1G08ABBHC-ET

Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet

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Figure 25:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
OTP DATA INPUT
command
A0h
OTP DATA PROGRAM
t WC
Notes: 1. The OTP page must be within the 02h–0Bh range.
add 1
Col
add 2
OTP address
Col
page
OTP
1
1
00h
x16 device: m = 1,056 words
x8 device: m = 2,112 bytes
36
1 up to m bytes
D
N
IN
serial input
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D
M
IN
PROGRAM
1Gb: x8, x16 NAND Flash Memory
command
10h
t WB
t PROG
(following "good" status confirmation)
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
READ STATUS
command
OTP data written
70h
Don’t Care
Status

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