MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 25

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Table 8:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
MT29F1G08ABB
MT29F1G16ABB
Number of die
Cell type
Number of simultaneously
programmed pages
Interleaved operations
between multiple die
Cache programming
Byte value MT29F1GxxABB
Page size
Spare area size (bytes)
Block size (w/o spare)
Organization
Serial access (MIN)
Byte value MT29F1G08ABB
Reserved
Planes per die
Plane size
Reserved
Byte value MT29F1GxxABB
Byte 0
Byte 1
Byte 2
Byte 3
Byte 4
MT29F1G16ABB
Device ID and Configuration Codes
Notes: 1. b = binary; h = hex.
1Gb, x8, 1.8V
1Gb, x16, 1.8V
Manufacturer ID
Not supported
Supported
Device ID
Options
Micron
128KB
(1Gb)
50ns
1Gb
2KB
SLC
x16
x16
64
x8
x8
1
1
1
I/O7
0
1
1
1
1
0
1
1
0
0
I/O6
0
0
0
0
0
0
1
0
1
0
0
25
I/O5
1
1
1
0
0
0
0
0
0
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I/O4
0
0
1
0
0
1
1
1
0
0
1Gb: x8, x16 NAND Flash Memory
I/O3
1
0
0
0
0
0
0
0
0
0
I/O2
1
0
0
0
0
1
1
1
0
0
Command Definitions
I/O1
0
0
0
0
0
0
0
0
0
0
©2006 Micron Technology, Inc. All rights reserved.
I/O0
0
1
1
0
0
1
1
1
0
0
Value
0xxx0b
000b
A1h
D5h
2Ch
B1h
00b
00b
00b
80h
01b
01b
01b
95h
00b
00b
00h
0b
1b
0b
1b
0b
1
Notes