MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 28

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

READ STATUS 70h
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
The MT29F1G08 and MT29F1G16 devices have an 8-bit status register the software can
read during device operation. On the x16 device, I/O[15:8] are “0” when reading the sta-
tus register. Table 9 on page 29 describes the status register.
After a READ STATUS (70h) command, all READ cycles will be from the status register
until a new command is issued. Changes in the status register will be seen on 1/O[7:0] as
long as CE# and RE# are LOW. It is not necessary to start a new READ cycle to see these
changes.
During monitoring of the status register to determine when the
Flash array to data register) is complete, the READ (00h) command must be re-issued to
make the change from STATUS READs to DATA READs. After the READ command has
been re-issued, pulsing the RE# line will result in outputting data, starting from the spec-
ified column address.
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
t
R (transfer from NAND