MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 19

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 11:
Table 6:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
CLE
H
H
X
X
X
X
L
L
L
L
L
Mode Selection
TC vs. Rp
ALE
H
H
X
X
X
X
L
L
L
L
L
Notes: 1. Mode selection settings for this table:
T
CE#
2. WP# should be biased to CMOS HIGH or LOW for standby.
1.20µs
1.00µs
X
X
X
H
800ns
600ns
400ns
200ns
L
L
L
L
L
L
L
0ns
H = Logic level HIGH
L = Logic level LOW
X = V
0
IH
or V
WE#
2kΩ
H
H
X
X
X
X
IL
4kΩ
RE#
H
H
H
H
H
H
X
X
X
X
6kΩ
Rp
19
8kΩ
0V/V
WP#
I
RC = TC
C = 100pf
OL
H
H
H
H
H
X
X
X
X
L
10kΩ
at 1.95V (MAX)
CC 2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mode
1Gb: x8, x16 NAND Flash Memory
Read mode
Write mode
Data input
Sequential read and data output
During READ (busy)
During PROGRAM (busy)
During ERASE (busy)
Write protect
Standby
12kΩ
©2006 Micron Technology, Inc. All rights reserved.
Address input
Address input
Command input
Command input
Bus Operation