MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 41

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Table 10:
Figure 30:
LOCK 2Ah
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
ALE Cycle
First
Second
I/O[15:8]
BLOCK LOCK Address Cycle Assignments
UNLOCK Operation
LOW
LOW
Notes: 1. I/O[15:8] is applicable only for x16 devices.
1
WE#
By default at power-on, if LOCK is HIGH, all of the blocks in the NAND Flash device are
locked and protected from PROGRAM and ERASE operations. If portions of the device
are unlocked using the UNLOCK (23h) command, they can be locked again using the
LOCK (2Ah) command. The LOCK command locks all of the blocks in the device. Locked
blocks are write-protected from PROGRAM and ERASE operations.
To lock all of the blocks in the device, issue the LOCK (2Ah) command.
When a PROGRAM or ERASE operation is issued to a locked block, R/B# goes LOW for
t
command reports bit 7 as “0,” indicating that the block is protected.
The LOCK (2Ah) command is disabled if LOCK is LOW at power-on or if the device is
locked tight (see page 42).
BA15
I/Ox
I/O7
ALE
LBSY. The PROGRAM or ERASE operation does not complete. The READ STATUS (70h)
BA7
CLE
CE#
RE#
2. Invert area bit is applicable for 24h command; it can be HIGH or LOW for the 23h com-
mand.
BA14
I/O6
BA6
UNLOCK
23h
Lower boundary
BA13
LOW
I/O5
add 1
Block
Block
add 2
41
BA12
LOW
I/O4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BA11
LOW
I/O3
1Gb: x8, x16 NAND Flash Memory
24h
BA10
LOW
I/O2
Upper boundary
Block
add 1
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
LOW
I/O1
BA9
add 2
Block
Invert Area Bit
I/O0
BA8
2