MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 64

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Figure 56:
Figure 57:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
I/Ox
ALE
CE#
CLE
WE#
I/Ox
CE#
ALE
RE#
CLE
80h
READ ID Operation
PROGRAM Operation with CE# “Don’t Care”
90h
Notes: 1. See Table 8 on page 25 for byte definitions.
Address (4 cycles)
Address, 1 cycle
00h
WE#
t WHR
CE#
t AR
t REA
Manufacturer ID
Data
Byte 0
t CS
t WP
64
input
t CH
1
Device ID
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Byte 1
1Gb: x8, x16 NAND Flash Memory
1
Byte 2
1
Data
Byte 3
©2006 Micron Technology, Inc. All rights reserved.
input
1
Timing Diagrams
Byte 4
Don‘t Care
10h