MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 48

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Table 14:
WRITE PROTECT
Figure 39:
Figure 40:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Parameter
CLE hold time
CLE setup time
Data hold time
Data setup time
RE# access time
RE# pulse width
WRITE cycle time
WE# pulse width HIGH
WE# HIGH to RE# LOW
WE# pulse width
Programmable I/O Drive Strength Register READ/WRITE Timing
ERASE Enable
ERASE Disable
The WRITE PROTECT feature protects the device against inadvertent PROGRAM and
ERASE operations. All PROGRAM and ERASE operations are disabled when WP# is LOW.
For WRITE PROTECT timing details, see Figures 39 through 42.
WE#
WP#
WE#
WP#
R/B#
R/B#
I/Ox
I/Ox
t WW
t WW
Symbol
t
t
t
t
t
t
t
t
t
t
60h
60h
CLHIO
CLSIO
DHIO
DSIO
REAIO
RPIO
WCIO
WHIO
WHRIO
WPIO
48
Min
250
100
100
15
25
15
30
50
50
–
D0h
D0h
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
Max
250
–
–
–
–
–
–
–
–
–
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes