MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 59

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MT29F1G08ABBHC-ET

Manufacturer Part Number
MT29F1G08ABBHC-ET
Description
NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
Manufacturer
Micron
Datasheet

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Manufacturer
Quantity
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Part Number:
MT29F1G08ABBHC-ET
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Part Number:
MT29F1G08ABBHC-ET:B
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Figure 50:
Figure 51:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
WE#
R/B#
I/Ox
ALE
CLE
CE#
RE#
R/B#
WE#
I/Ox
ALE
CE#
RE#
CLE
00h
READ Operation with CE# “Don’t Care”
RANDOM DATA READ Operation
Column address N
add 1
00h
Col
add 2
Col
Address (4 cycles)
add 1
Row
add 2
Row
30h
I/Ox
CE#
RE#
30h
t WB
Busy
t R
t R
t RR
t AR
t CEA
t REA
59
D
t RC
OUT
N
Out
N + 1
D
OUT
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
05h
Data output
Column address M
add 1
Col
add 2
Col
©2006 Micron Technology, Inc. All rights reserved.
E0h
Timing Diagrams
t CLR
Don‘t Care
t WHR
t REA
D
M
OUT
Don’t Care
M + 1
D
OUT

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