MT29F1G08ABBHC-ET Micron, MT29F1G08ABBHC-ET Datasheet - Page 47

• Manufacturer Part Number: MT29F1G08ABBHC-ET
• Description: NAND Flash Memory; Density: 1Gb; Organization: 128Mbx8; Bits/Cell: SLC; I/O: Common; Supply Voltage: 1.8V; Operating Temperature Range: -40° to +85°C; Package: 63-VFBGA
• Manufacturer: Micron

Programmable Drive Strength
PROGRAMMABLE I/O DRIVE STRENGTH B8h
Figure 38:
Table 13:
PDF: 09005aef81dc05df / Source: 09005aef821d5f08
1gb_nand_m48a__2.fm - Rev. E 1/08 EN
Drive Strength
Full (default)
Three-quarters
One-half
One-quarter
WE#
I/Ox
ALE
CE#
RE#
CLE
I/O Drive Strength Settings
Programmable I/O Drive Strength Command Sequence
Notes: 1. WRITE operation.
Notes: 1. For WRITE operation, X = “Don’t Care.” For READ operation, X = “Undefined.”
t CLSIO t CLHIO
t WPIO
I/O7
X
X
X
X
The B8h command is used to change the default I/O drive strength as shown in
Figure 38. Drive strength should be selected based on expected memory bus loading.
There are four allowable settings for the output drive strength. The settings and the
default drive strength are shown in Table 13. The device returns to the default drive
strength mode after it is power-cycled. Figure 38 shows how to write and read the drive
strength. Refer toTable 14 on page 48 for unique timing parameters associated with the
PROGRAMMABLE I/O DRIVE STRENGTH command. Note that the AC timing charac-
teristics documented in Table 21 on page 54 and Table 22 on page 54 may need to be
relaxed if the I/O drive strength is not set to “full.”
2. READ operation.
2. Timing parameters shown in Table 21 on page 54 and Table 22 on page 54 represent full
drive setting.
B8h
I/O6
X
X
X
X
t WHIO
t WCIO
I/O5
X
X
X
X
47
t DSIO
I/O[7:0]
I/O4
X
X
X
X
t WHRIO
t DHIO
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1Gb: x8, x16 NAND Flash Memory
t REAIO
I/O3
0
0
1
1
t RPIO
I/O[7:0]
I/O2
0
1
0
1
Command Definitions
©2006 Micron Technology, Inc. All rights reserved.
2
I/O1
X
X
X
X
I/O0
X
X
X
X