LM3S2110-IQN20-A0 Luminary Micro, Inc., LM3S2110-IQN20-A0 Datasheet - Page 452

• Manufacturer Part Number: LM3S2110-IQN20-A0
• Description: Microcontroller
• Manufacturer: Luminary Micro, Inc.

Electrical Characteristics
20.1.5
452
Table 20-4. Detailed Power Specifications
a. Pending characterization completion.
Flash Memory Characteristics
Table 20-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
I
Parameter
DD_DEEPSLEEP
Parameter
T
I
PE
T
DD_SLEEP
T
I
ERASE
T
DD_RUN
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C
Word program time
Page erase time
Mass erase time
Parameter Name
Run mode 1 (Flash
loop)
Run mode 2 (Flash
loop)
Run mode 1 (SRAM
loop)
Run mode 2 (SRAM
loop)
Sleep mode
Deep-Sleep mode
Conditions
V
Code= while(1){} executed in Flash
Peripherals = All ON
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in Flash
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in SRAM
Peripherals = All ON
System Clock = 25 MHz (with PLL)
V
Code= while(1){} executed in SRAM
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
V
Peripherals = All OFF
System Clock = 25 MHz (with PLL)
LDO = 2.25 V
Peripherals = All OFF
System Clock = IOSC30KHZ/64
DD25
DD25
DD25
DD25
DD25
= 2.50 V
= 2.50 V
= 2.50 V
= 2.50 V
= 2.50 V
Preliminary
a
10,000
Min
200
10
20
20
Nom
0.14
3.3 V V
3
0
3
0
0
100,000
Nom
V
-
-
-
-
DDPHY
DD
pending
pending
pending
pending
pending
pending
, V
Max
Max
DDA
-
-
-
-
-
,
cycles
a
a
a
a
a
a
years
Unit
ms
ms
µs
November 29, 2007
Nom
0.18
64
33
57
27
12
2.5 V V
pending
pending
pending
pending
pending
pending
Max
DD25
a
a
a
a
a
a
Unit
mA
mA
mA
mA
mA
mA