MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 3

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
SA0, SA1, SAs
SA0, SA1, SAs
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball description, and tim-
ing diagrams for detailed information.
ADSC#
ADSC#
MODE
ADSP#
ADSP#
MODE
BWd#
BWb#
BWb#
BWa#
BWE#
ADV#
BWa#
BWE#
ADV#
BWc#
GW#
CE2#
GW#
CE2#
OE#
CLK
CE#
CE2
CLK
OE#
CE#
CE2
20
19
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
BYTE “b”
BYTE “a”
REGISTER
ENABLE
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
REGISTER
ENABLE
REGISTER
ADDRESS
Figure 3: Functional Block Diagram
Figure 4: Functional Block Diagram
COUNTER AND
CLR
BINARY
LOGIC
PIPELINED
20
2
ENABLE
PIPELINED
Q1
Q0
19
ENABLE
CLR
SA0-SA1
COUNTER
BINARY
SA0-SA1
18
17
Q1
Q0
SA0'
512K x 32/36
SA1'
SA1'
SA0'
1 Meg x 18
9
9
9
9
9
9
20
19
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
3
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
9
9
9
9
9
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1 Meg x 9 x 2
512K x 8 x 4
512K x 9 x 4
MEMORY
MEMORY
ARRAY
ARRAY
(x32)
(x36)
18
36
SENSE
AMPS
SENSE
AMPS
18
36
REGISTERS
2
REGISTERS
4
OUTPUT
OUTPUT
18
18
36
36
OUTPUT
BUFFERS
OUTPUT
BUFFERS
©2003 Micron Technology, Inc.
E
E
REGISTERS
REGISTERS
INPUT
INPUT
18
36
DQs
DQPa
DQPb
DQPc
DQPd
DQs
DQPa
DQPb