MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 19

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
1. D(A2) refers to output from address A2. D(A2 + 1) refers to output from the next internal burst address following
2. CE2# and CE2 have timing identical to CE#. On this diagram, when CE# is LOW, CE2# is LOW and CE2 is HIGH. When
3. OE# must be HIGH before the input data setup and held HIGH throughout the data hold time. This prevents input/
4. ADV# must be HIGH to permit a WRITE to the loaded address.
5. Full-width WRITE can be initiated by GW# LOW; or GW# HIGH and BWE#, BWa#, and BWb# LOW for x18 device; or
BWa#-BWd#
A2.
CE# is HIGH, CE2# is HIGH and CE2 is LOW.
output data contention for the time period prior to the byte write enable inputs being sampled.
GW# HIGH and BWE#, BWa#–BWd# LOW for x32 and x36 devices.
ADDRESS
(NOTE 2)
ADSP#
ADSC#
BWE#,
ADV#
GW#
OE#
CLK
CE#
Q
D
BURST READ
High-Z
t ADSS
t CES
t AS
A1
t ADSH
t CEH
t AH
t KH
t OEHZ
(NOTE 3)
Byte write signals are ignored for first cycle when
ADSP# initiates burst
t KC
t ADSS
t KL
Single WRITE
t DS
D(A1)
t ADSH
t DH
A2
(NOTE 4)
(NOTE 1)
D(A2)
WRITE Timing
Figure 8:
D(A2 + 1)
(NOTE 5)
t WS
BURST WRITE
19
PIPELINED, DCD SYNCBURST SRAM
t WH
18Mb: 1 MEG x 18, 512K x 32/36
D(A2 + 1)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
ADV# suspends burst
D(A2 + 2)
ADSC# extends burst
D(A2 + 3)
t ADSS
A3
D(A3)
t ADSH
DON’T CARE
Extended BURST WRITE
t AAS
t WS
D(A3 + 1)
©2003 Micron Technology, Inc.
t AAH
t WH
D(A3 + 2)
UNDEFINED