MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 10

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 3:
Table 4:
Table 5:
NOTE:
Table 6:
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
FUNCTION
FUNCTION
READ
READ
WRITE Byte “a”
WRITE Byte “b”
WRITE All Bytes
WRITE All Bytes
READ
READ
WRITE Byte “a”
WRITE All Bytes
WRITE All Bytes
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
Using BWE# and BWa# through BWd#, any one or more bytes may be written.
FIRST ADDRESS
FIRST ADDRESS
(EXTERNAL)
(EXTERNAL)
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
Interleaved Burst Address Table (Mode = NC or HIGH)
Linear Burst Address Table (Mode = LOW)
Partial Truth Table for WRITE Commands (x18)
Partial Truth Table for WRITE Commands (x32/x36)
SECOND ADDRESS
SECOND ADDRESS
(INTERNAL)
(INTERNAL)
GW#
X...X01
X...X00
X...X11
X...X10
X...X01
X...X10
X...X11
X...X00
H
H
H
H
L
GW#
H
H
H
H
H
L
BWE#
H
X
L
L
L
10
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
THIRD ADDRESS
THIRD ADDRESS
BWE#
BWa#
H
Micron Technology, Inc., reserves the right to change products or specifications without notice.
X
(INTERNAL)
(INTERNAL)
L
L
L
L
H
X
X
L
L
X...X10
X...X11
X...X00
X...X01
X...X10
X...X11
X...X00
X...X01
BWb#
X
H
H
X
L
BWa#
X
H
H
X
L
L
FOURTH ADDRESS
FOURTH ADDRESS
BWc#
H
H
X
X
L
(INTERNAL)
(INTERNAL)
X...X11
X...X10
X...X01
X...X00
X...X11
X...X00
X...X01
X...X10
©2003 Micron Technology, Inc.
BWb#
X
H
H
X
L
L
BWd#
X
H
H
X
L