MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 26

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 19: TAP AC Electrical Characteristics
Notes 1, 2; 0ºC £ T
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
1.
2. Test conditions are specified using the load in Figures 18 and 19.
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
TCK LOW to TDO unknown
TCK LOW to TDO valid
TDI valid to TCK HIGH
TCK HIGH to TDI invalid
Setup Times
TMS setup
Capture setup
Hold Times
TMS hold
Capture hold
t
CS and
t
CH refer to the setup and hold time requirements of latching data from the boundary scan register.
A
£ +70ºC; V
Test Mode Select
Test Data-Out
Test Data-In
Test Clock
DD
(TDO)
(TMS)
(TCK)
(TDI)
= 3.3V ±0.165V or 2.5V ±0.125V
1
t MVTH
t DVTH
TAP Timing
2
Figure 17:
t THTL
t THMX
t THDX
26
t
TLTH
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
3
t THTH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DON’T CARE
SYMBOL
4
t
t
t
t
t
t
t
t
t
MVTH
THMX
THTH
DVTH
THDX
TLOX
TLOV
THTL
TLTH
t
f
t
CH
TF
CS
t TLOX
t TLOV
5
UNDEFINED
MIN
100
40
40
10
10
10
10
10
10
0
6
MAX
10
20
©2003 Micron Technology, Inc.
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns