MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 2

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MT58L1MY18D

Manufacturer Part Number
MT58L1MY18D
Description
18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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Part Number:
MT58L1MY18DF-6
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Quantity:
20 000
(CE#), two additional chip enables for easy depth
expansion (CE2, CE2#), burst control inputs (ADSC#,
ADSP#, ADV#), byte write enables (BWx#), and global
write (GW#).
(OE#), clock (CLK) and snooze enable (ZZ). There is
also a burst mode input (MODE) that selects between
interleaved and linear burst modes. The data out (Q) is
enabled by OE#. WRITE cycles can be from one to two
bytes wide (x18) or from one to four bytes wide (x32/
x36), as controlled by the write control inputs.
status processor (ADSP#) or address status controller
(ADSC#) inputs. Subsequent burst addresses can be
internally generated as controlled by the burst
advance input (ADV#).
simplify WRITE cycles. This allows self-timed write
cycles. Individual byte enables allow individual bytes
to be written. During WRITE cycles on the x18 device,
BWa# controls DQa pins/balls and DQPa; BWb# con-
trols DQb pins/balls and DQPb. During WRITE cycles
on the x32 and x36 devices, BWa# controls DQa pins/
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
Asynchronous inputs include the output enable
Burst operation can be initiated with either address
Address and write control are registered on-chip to
2
PIPELINED, DCD SYNCBURST SRAM
balls and DQPa; BWb# controls DQb pins/balls and
DQPb; BWc# controls DQc pins/balls and DQPc; BWd#
controls DQd pins/balls and DQPd. GW# LOW causes
all bytes to be written. Parity bits are only available on
the x18 and x36 versions.
enable register which delays turning off the output
buffer an additional cycle when a deselect is executed.
This feature allows depth expansion without penaliz-
ing system performance.
PowerPC pipelined systems and systems that benefit
from a very wide, high-speed data bus. The device is
also ideal in generic 16-, 18-, 32-, 36-, 64-, and 72-bit-
wide applications.
sramds) for the latest data sheet.
Dual Voltage I/O
function. The 2.5V V
I/O function.
18Mb: 1 MEG x 18, 512K x 32/36
This device incorporates an additional pipelined
The device is ideally suited for Pentium
Please refer to Micron’s Web site
The 3.3V V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
device is tested for 3.3V and 2.5V I/O
DD
device is tested for only 2.5V
(www.micron.com/
©2003 Micron Technology, Inc.
®
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