MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 14

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: TQFP Capacitance
Note 6; notes appear following parameter tables on page 17
Table 12: FBGA Capacitance
Note 6; notes appear following parameter tables on page 17
Table 13: TQFP Thermal Resistance
Note 6; notes appear following parameter tables on page 17
Table 14: FBGA Thermal Resistance
Note 6; notes appear following parameter tables on page 17
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
Junction to Case (Top)
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Junction to Ambient
(Airflow of 1m/s, two-layer board)
Thermal Resistance
Junction to Case (Top)
Junction to Ambient
(Airflow of 1m/s, two-layer board)
Junction to Board (Bottom)
methods and procedures for measuring
methods and procedures for measuring
thermal impedance, per EIA/JESD51.
thermal impedance, per EIA/JESD51.
Test conditions follow standard test
Test conditions follow standard test
T
T
A
A
= 25ºC; f = 1 MHz;
= 25ºC; f = 1 MHz;
CONDITIONS
CONDITIONS
V
V
DD
DD
CONDITIONS
CONDITIONS
= 3.3V
= 3.3V
14
PIPELINED, DCD SYNCBURST SRAM
18Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
C
C
C
C
C
C
C
C
CK
CK
O
A
O
A
I
I
SYMBOL
SYMBOL
q
q
q
q
q
JA
JC
JA
JC
JB
TYP
TYP
4.2
3.5
4.2
4
4
4
4
5
28.9
TYP
10.4
TYP
4.2
MAX
MAX
1.7
32
4.5
5.5
5
4
5
5
5
5
©2003 Micron Technology, Inc.
UNITS
UNITS
UNITS
UNITS
ºC/W
ºC/W
ºC/W
ºC/W
ºC/W
pF
pF
pF
pF
pF
pF
pF
pF