MT58L1MY18D Micron Semiconductor Products, Inc., MT58L1MY18D Datasheet - Page 21

• Manufacturer Part Number: MT58L1MY18D
• Description: 18Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O; 2.5V Vdd, 2.5V I/O, Pipelined, Dcd,
• Manufacturer: Micron Semiconductor Products, Inc.

SNOOZE MODE
mode in which the device is deselected and current is
reduced to I
dictated by the length of time ZZ is in a HIGH state.
After the device enters SNOOZE MODE, all inputs
except ZZ become gated inputs and are ignored.
Table 18: SNOOZE MODE Electrical Characteristics
NOTE:
18Mb: 1 Meg x 18, 512K x 32/36, Pipelined, DCD SyncBurst SRAM
MT58L1MY18D_16_D.fm – Rev. D, Pub 2/03
1. This parameter is sampled.
DESCRIPTION
Current during SNOOZE MODE
ZZ active to input ignored
ZZ inactive to input sampled
ZZ active to snooze current
ZZ inactive to exit snooze current
SNOOZE MODE is a low-current, power-down
Outputs (Q)
ALL INPUTS
(except ZZ)
SB2Z
I
SUPPLY
CLK
. The duration of SNOOZE MODE is
ZZ
t ZZI
t ZZ
I ISB2Z
SNOOZE MODE Waveform
CONDITIONS
ZZ ³ V
IH
Figure 10:
21
PIPELINED, DCD SYNCBURST SRAM
High-Z
causes the device to enter SNOOZE MODE. When ZZ
becomes a logic HIGH, I
setup time
pending when the device enters SNOOZE MODE is not
guaranteed to complete successfully. Therefore,
SNOOZE MODE must not be initiated until valid pend-
ing operations are completed.
18Mb: 1 MEG x 18, 512K x 32/36
SYMBOL
ZZ is an asynchronous, active HIGH input that
t
I
t
t
RZZI
SB
t
RZZ
ZZI
ZZ
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Z
t
ZZ is met. Any READ or WRITE operation
2(
MIN
t
0
KC)
DESELECT or READ Only
t RZZI
2(
2(
MAX
SB2Z
t RZZ
30
t
t
KC)
KC)
is guaranteed after the
DON’T CARE
UNITS
mA
ns
ns
ns
ns
©2003 Micron Technology, Inc.
NOTES
1
1
1
1