MT58L128L32F1 Micron Semiconductor Products, Inc., MT58L128L32F1 Datasheet - Page 2

• Manufacturer Part Number: MT58L128L32F1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE: Functional block diagrams illustrate simplified device operation. See truth tables, pin descriptions, and timing diagrams
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
SA0, SA1, SA
SA0, SA1, SA
MODE
ADSC#
ADSP#
MODE
ADSC#
ADSP#
BWE#
BWd#
BWb#
BWa#
BWE#
BWb#
ADV#
BWc#
ADV#
BWa#
GW#
GW#
CE2#
CE2#
OE#
CLK
CE#
CE2
OE#
CLK
CE#
CE2
for detailed information.
18
17
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
ADDRESS
REGISTER
BYTE “b”
BYTE “a”
REGISTER
ENABLE
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
REGISTER
ENABLE
CLR
AND LOGIC
ADDRESS
REGISTER
COUNTER
FUNCTIONAL BLOCK DIAGRAM
FUNCTIONAL BLOCK DIAGRAM
BINARY
COUNTER AND
CLR
BINARY
LOGIC
Q1
Q0
18
2
SA0-SA1
Q1
Q0
17
SA0'
SA1'
SA0-SA1
128K x 32/36
256K x 18
16
15
SA0'
SA1'
FLOW-THROUGH SYNCBURST SRAM
2
9
9
9
9
9
9
18
WRITE DRIVER
WRITE DRIVER
17
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
BYTE “b”
BYTE “a”
BYTE “d”
BYTE “b”
BYTE “a”
BYTE “c”
4Mb: 256K x 18, 128K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
9
9
9
9
9
9
256K x 9 x 2
128K x 8 x 4
128K x 9 x 4
MEMORY
MEMORY
ARRAY
ARRAY
(x32)
(x36)
18
36
SENSE
AMPS
SENSE
AMPS
18
36
36
18
4
OUTPUT
BUFFERS
2
OUTPUT
BUFFERS
©2003, Micron Technology, Inc.
REGISTERS
REGISTERS
INPUT
INPUT
18
36
DQPa
DQPd
DQPa
DQPb
DQs
DQs