MT58L128L32F1 Micron Semiconductor Products, Inc., MT58L128L32F1 Datasheet - Page 19

• Manufacturer Part Number: MT58L128L32F1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

3.3V I/O AC TEST CONDITIONS
LOAD DERATING CURVES
SRAM timing is dependent upon the capacitive load-
ing on the outputs.
voltage curves.
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
Input pulse levels ................. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ..................... V
Output reference levels ............................ V
Output load ............................. See Figures 1 and 2
Micron 256K x 18, 128K x 32, and 128K x 36 SyncBurst
Consult the factory for copies of I/O current versus
3.3V I/O Output Load Equivalents
Q
Q
351
Z = 50Ω
.................... V
O
Figure 1
Figure 2
+3.3V
V = 1.5V
T
IH
317
5pF
IL
= (V
= (V
50Ω
DD
DD
/2.2) + 1.5V
/2.2) - 1.5V
DD
DD
Q/2.2
/2.2
FLOW-THROUGH SYNCBURST SRAM
19
2.5V I/O AC TEST CONDITIONS
Input pulse levels ............. V
Input rise and fall times ..................................... 1ns
Input timing reference levels ................... V
Output reference levels ............................... V
Output load ............................. See Figures 3 and 4
4Mb: 256K x 18, 128K x 32/36
2.5V I/O Output Load Equivalents
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q
Q
225Ω
................ V
Z = 50Ω
O
Figure 3
Figure 4
+2.5V
IH
IL
V = 1.25V
= (V
T
= (V
225Ω
5pF
DD
DD
/2.64) + 1.25V
50Ω
/2.64) - 1.25V
©2003, Micron Technology, Inc.
DD
DD
/2.64
Q/2