MT58L128L32F1 Micron Semiconductor Products, Inc., MT58L128L32F1 Datasheet - Page 13

• Manufacturer Part Number: MT58L128L32F1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

ABSOLUTE MAXIMUM RATINGS*
Voltage on V
Voltage on V
V
Storage Temperature (plastic) ........... -55°C to +150°C
Junction Temperature** ..................................... +150°C
Short Circuit Output Current .............................. 100mA
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ T
NOTE: 1. All voltages referenced to V
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
IN
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
Relative to V
Relative to V
-0.5V to V
2. Overshoot:
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. V
A
Undershoot:
Power-up:
values. AC I/O curves are available upon request.
≤ +70°C; V
DD
DD
DD
Q should never exceed V
DD
Q Supply
Supply
Q + 0.5V
SS
SS
.................................... -0.5V to +4.6V
.................................... -0.5V to +4.6V
DD
V
V
V
, V
IH
IL
IH
≥ -0.7V for t ≤
DD
≤ +4.6V for t ≤
≤ +3.6V and V
OH
Q = +3.3V +0.3V/-0.165V unless otherwise noted)
, V
OL
testing is shown in Figure 2 for 3.3V I/O. AC load current is higher than the stated DC
SS
DD
(GND).
. V
DD
t
Output(s) disabled,
DD
t
KC/2 for I ≤ 20mA
KC/2 for I ≤ 20mA
≤ 3.135V for t ≤ 200ms
CONDITIONS
0V ≤ V
0V ≤ V
and V
I
I
OH
OL
= -4.0mA
= 8.0mA
DD
IN
IN
Q can be connected together, for 3.3V I/O operation only.
≤ V
≤ V
DD
DD
FLOW-THROUGH SYNCBURST SRAM
13
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Maximum junction temperature depends upon
package type, cycle time, loading, ambient tempera-
ture and airflow. See Micron Technical Note TN-05-14
for more information.
4Mb: 256K x 18, 128K x 32/36
SYMBOL
V
V
V
V
V
IL
V
DD
IL
OH
DD
OL
IH
IL
O
I
Q
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.135
3.135
MIN
-1.0
-0.3
-1.0
2.0
2.4
–
V
DD
MAX
0.8
1.0
1.0
0.4
3.6
3.6
–
+ 0.3
UNITS
µA
µA
V
V
V
V
V
V
©2003, Micron Technology, Inc.
NOTES
1, 2
1, 2
1, 4
1, 4
1, 5
3
1