MT58L128L32F1 Micron Semiconductor Products, Inc., MT58L128L32F1 Datasheet - Page 16

• Manufacturer Part Number: MT58L128L32F1
• Description: 4Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

TQFP THERMAL RESISTANCE
FBGA THERMAL RESISTANCE
NOTE: 1. This parameter is sampled.
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_F.p65 – Rev. F, Pub. 1/03 EN
DESCRIPTION
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Top of Case)
DESCRIPTION
Junction to Ambient
(Airflow of 1m/s)
Junction to Case (Top)
Junction to Pins
(Bottom)
2. Preliminary package data.
Test conditions follow standard test methods
Test conditions follow standard test methods
and procedures for measuring thermal
and procedures for measuring thermal
impedance, per EIA/JESD51.
impedance, per EIA/JESD51.
CONDITIONS
CONDITIONS
FLOW-THROUGH SYNCBURST SRAM
16
4Mb: 256K x 18, 128K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
SYMBOL
θ
θ
θ
θ
θ
JA
JC
JA
JC
JB
TYP
TYP
2.8
46
40
17
9
UNITS NOTES
UNITS NOTES
©2003, Micron Technology, Inc.
°C/W
°C/W
°C/W
°C/W
°C/W
1, 2
1, 2
1, 2
1
1