MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 9

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MT55L1MY18F

Manufacturer Part Number
MT55L1MY18F
Description
18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
Manufacturer
Micron Semiconductor Products, Inc.
Datasheet

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Table 2:
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
SYMBOL
V
TDO
V
V
DD
NC
NF
DD
SS
Q
FBGA Ball Descriptions (continued)
Output
Supply
Supply
Supply
TYPE
IEEE 1149.1 Test Output: JEDEC-standard 3.3V and 2.5V I/O levels.
Power Supply: See DC Electrical Characteristics and Operating Conditions for range.
Isolated Output Buffer Supply: See DC Electrical Characteristics and Operating Conditions for
range.
Ground: GND.
No Connect: These balls are not internally connected to the die. They may be left floating,
driven by signals, or connected to ground to improve package heat dissipation.
No Function: These balls are internally connected to the die and have the capacitance of an
input pin. They may be left floating, driven by signals, or connected to ground to improve
package heat dissipation.
9
18Mb: 1 MEG x 18, 512K x 32/36
DESCRIPTION
Micron Technology, Inc., reserves the right to change products or specifications without notice.
FLOW-THROUGH ZBT SRAM
©2003 Micron Technology, Inc.

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