MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 11

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
1. A STALL or IGNORE CLOCK EDGE cycle is not shown in the above diagram. This is because CKE# HIGH only blocks the
2. States change on the rising edge of the clock (CLK).
KEY:
clock (CLK) input and does not change the state of the device.
READ
BURST
COMMAND
DS
READ
WRITE
BURST
READ
DS
BURST
BEGIN
READ
READ
OPERATION
DESELECT
New READ
New WRITE
BURST READ,
BURST WRITE, or
CONTINUE DESELECT
BURST
State Diagram For ZBT SRAM
DESELECT
Figure 7:
WRITE
READ
DS
11
18Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
BURST
FLOW-THROUGH ZBT SRAM
BURST
WRITE
BURST
WRITE
BEGIN
WRITE
DS
WRITE
BURST
©2003 Micron Technology, Inc.