MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 3

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

NOTE:
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
Functional block diagrams illustrate simplified device operation. See truth tables, pin/ball descriptions, and tim-
ing diagrams for detailed information.
CKE#
CKE#
CLK
CLK
SA0, SA1, SA
SA0, SA1, SA
ADV/LD#
ADV/LD#
BWb#
BWb#
BWd#
BWa#
BWa#
BWc#
MODE
MODE
R/W#
R/W#
CE2#
CE2#
K
K
OE#
OE#
CE#
CE2
CE#
CE2
CE
CE
20
19
ADDRESS
REGISTER
ADDRESS
REGISTER
Figure 3: Functional Block Diagram
Figure 4: Functional Block Diagram
READ LOGIC
READ LOGIC
WRITE ADDRESS
WRITE ADDRESS
AND DATA COHERENCY
AND DATA COHERENCY
REGISTER
REGISTER
WRITE REGISTRY
WRITE REGISTRY
CONTROL LOGIC
CONTROL LOGIC
ADV/LD#
ADV/LD#
20
19
K
K
SA1
SA0
SA1
SA0
512K x 32/36
1 Meg x 18
D1
D0
D1
D0
BURST
LOGIC
BURST
LOGIC
18
17
3
18
36
Q1
Q0
Q1
Q0
18Mb: 1 MEG x 18, 512K x 32/36
SA1'
SA0'
SA1'
SA0'
DRIVERS
19
20
DRIVERS
WRITE
WRITE
20
19
20
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
18
36
FLOW-THROUGH ZBT SRAM
18
36
1 Meg x 9 x 2
512K x 8 x 4
512K x 9 x 4
MEMORY
MEMORY
ARRAY
ARRAY
(x32)
(x36)
REGISTER
REGISTER
INPUT
INPUT
18
36
M
M
N
A
N
A
S
E
S
E
P
S
S
E
S
E
P
S
E
E
18
36
D
A
A
R
N
G
D
A
A
R
N
G
T
S
T
E
E
T
S
T
E
E
I
I
18
36
O
U
U
U
O
U
U
U
T
P
T
B
E
R
T
P
T
B
E
R
F
F
S
F
F
S
E
E
©2003 Micron Technology, Inc.
18
36
DQs
DQPa
DQPb
DQs
DQPa
DQPb
DQPc
DQPd