MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 17

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 17: AC Electrical Characteristics and Recommended Operating Conditions
Notes 11–13; notes appear following parameter tables on page 18; 0ºC £ T
(industrial); V
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
DESCRIPTION
Clock
Clock cycle time
Clock frequency
Clock HIGH time
Clock LOW time
Output Times
Clock to output valid
Clock to output invalid
Clock to output in Low-Z
Clock to output in High-Z
OE# to output valid
OE# to output in Low-Z
OE# to output in High-Z
Setup Times
Address
Clock enable (CKE#)
Control signals
Data-in
Hold Times
Address
Clock enable (CKE#)
Control signals
Data-in
DD
= 3.3V ±0.165V unless otherwise noted
SYMBOL
t
t
t
t
KHQX1
t
t
t
t
t
t
t
t
t
t
t
t
t
t
KHQV
KHQX
KHKH
KHQZ
GHQZ
AVKH
DVKH
KHAX
KHDX
KHKL
KLKH
GLQV
GLQX
EVKH
CVKH
KHEX
KHCX
f
KF
MIN
8.8
2.5
2.5
2.5
2.5
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0
-8.8
MAX
113
6.5
4.0
3.5
3.5
17
18Mb: 1 MEG x 18, 512K x 32/36
MIN
10.0
2.5
2.5
3.0
3.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-10
A
FLOW-THROUGH ZBT SRAM
£ +70ºC; T
MAX
100
7.5
5.0
4.0
4.0
MIN
11.0
3.0
3.0
3.0
3.0
2.0
2.0
2.0
2.0
0.5
0.5
0.5
0.5
J
0
£ 95ºC (commercial); T
-11
MAX
8.5
5.0
5.0
5.0
90
UNITS
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
©2003 Micron Technology, Inc.
J
£ 110ºC
10, 15, 16
10, 15, 16
10, 15, 16
10, 15, 16
NOTES
14
14
15
11
17
17
17
17
17
17
17
17