MT55L1MY18F Micron Semiconductor Products, Inc., MT55L1MY18F Datasheet - Page 15

• Manufacturer Part Number: MT55L1MY18F
• Description: 18Mb ZBT SRAM, 3.3V Vdd, 2.5V or 3.3V I/O; 2.5V Vdd, 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

Table 11: TQFP Capacitance
Note 10; notes appear following parameter tables on page 18
Table 12: FBGA Capacitance
Note 10; notes appear following parameter tables on page 18
Table 13: TQFP Thermal Resistance
Note 10; notes appear following parameter tables on page 18
Table 14: FBGA Thermal Resistance
Note 10; notes appear following parameter tables on page 18
18Mb: 1 Meg x 18, 512K x 32/36 Flow-through ZBT SRAM
MT55L1MY18F_16_D.fm – Rev. D, Pub. 2/03
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Control Input Capacitance
Input/Output Capacitance (DQ)
Address Input Capacitance
Clock Capacitance
Junction to Ambient
(Airflow if 1m/s, two-layer
board)
Junction to Case (Top)
Junction to Ambient
(Airflow if 1m/s, two-layer
board)
Junction to Case (Top)
Junction to Board (Bottom)
and procedures for measuring thermal impedance, per
and procedures for measuring thermal impedance, per
Test conditions follow standard test methods
Test conditions follow standard test methods
T
T
A
A
= 25°C; f = 1 MHz
= 25°C; f = 1 MHz
CONDITIONS
CONDITIONS
CONDITIONS
CONDITIONS
EIA/JESD51.
EIA/JESD51.
V
V
DD
DD
= 3.3V
= 3.3V
15
18Mb: 1 MEG x 18, 512K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
FLOW-THROUGH ZBT SRAM
SYMBOL
SYMBOL
C
C
C
C
C
C
C
C
CK
CK
O
O
A
A
I
I
SYMBOL
SYMBOL
q
q
q
q
q
TYP
TYP
4.2
3.5
4.2
JA
JA
JC
JC
JB
4
4
4
4
5
MAX
MAX
TYP
28.9
TYP
10.4
4.5
5.5
4.2
1.7
32
5
4
5
5
5
5
©2003 Micron Technology, Inc.
UNITS
UNITS
UNITS
UNITS
°C/W
°C/W
°C/W
°C/W
°C/W
pF
pF
pF
pF
pF
pF
pF
pF