XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 85
XC908AS60ACFU
Manufacturer Part Number
XC908AS60ACFU
Description
MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
Manufacturer
Motorola Semiconductor Products
Datasheet
1.XC908AS60ACFU.pdf
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5.8 FLASH-2 Program Operation
MC68HC908AZ60A — Rev 2.0
MOTOROLA
NOTE:
Programming of the FLASH memory is done on a row basis. A row
consists of 64 consecutive bytes with address ranges as follows:
During the programming cycle, make sure that all addresses being
written to fit within one of the ranges specified above. Attempts to
program addresses in different row ranges in one programming cycle will
fail. Use this step-by-step procedure to program a row of FLASH-2
memory.
In order to avoid program disturbs, the row must be erased before any
byte on that row is programmed.
10. Clear the PGM bit.
11. Wait for time, t
1. Set the PGM bit in the FLASH-2 Control Register (FL2CR). This
2. Read the FLASH-2 Block Protect Register (FL2BPR).
3. Write to any FLASH-2 address within the row address range
4. Wait for time, t
5. Set the HVEN bit.
6. Wait for time, t
7. Write data byte to the FLASH-2 address to be programmed.
8. Wait for time, t
9. Repeat step 7 and 8 until all the bytes within the row are
•
•
•
•
$XX00 to $XX3F
$XX40 to $XX7F
$XX80 to $XXBF
$XXC0 to $XXFF
configures the memory for program operation and enables the
latching of address and data programming.
desired with any data.
programmed.
FLASH-2 Memory
NVS
PGS
NVH
PROG
.
.
.
.
FLASH-2 Program Operation
FLASH-2 Memory
Technical Data
85
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