XC908AS60ACFU Motorola Semiconductor Products, XC908AS60ACFU Datasheet - Page 83
XC908AS60ACFU
Manufacturer Part Number
XC908AS60ACFU
Description
MC68HC908AZ60A, MC68HC908AS60A Hcmos Microcontroller Unit Technical Data
Manufacturer
Motorola Semiconductor Products
Datasheet
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5.6 FLASH-2 Mass Erase Operation
MC68HC908AZ60A — Rev 2.0
MOTOROLA
NOTE:
NOTE:
NOTE:
The vector locations and the FLASH Block Protect Registers are located
in the same page. FL1BPR and FL2BPR are not protected with special
hardware or software; therefore, if this page is not protected by FL1BPR
and the vector locations are erased by either a page or a mass erase
operation, both FL1BPR and FL2BPR will also get erased.
Use this step-by-step procedure to erase the entire FLASH-2 memory to
read as logic 1:
If the address written to in Step 3 is within address space protected by
the FLASH-2 Block Protect Register (FL2BPR), no erase will occur.
A. Programming and erasing of FLASH locations can not be performed
by code being executed from the same FLASH array.
B. While these operations must be performed in the order shown, other
unrelated operations may occur between the steps. Care must be taken
however to ensure that these operations do not access any address
10. Wait for a time, t
1. Set both the ERASE bit and the MASS bit in the FLASH-2 Control
2. Read the FLASH-2 Block Protect Register (FL2BPR).
3. Write to any FLASH-2 address within the FLASH-2 array with any
4. Wait for a time, t
5. Set the HVEN bit.
6. Wait for a time, t
7. Clear the ERASE bit.
8. Wait for a time, t
9. Clear the HVEN bit.
Register (FL2CR).
data.
normal read mode.
FLASH-2 Memory
RCV
NVS
MERASE
NVHL
.
, after which the memory can be accessed in
.
.
FLASH-2 Mass Erase Operation
FLASH-2 Memory
Technical Data
83
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