SAM3U4E Atmel Corporation, SAM3U4E Datasheet - Page 313
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SAM3U4E
Manufacturer Part Number
SAM3U4E
Description
Manufacturer
Atmel Corporation
Specifications of SAM3U4E
Flash (kbytes)
256 Kbytes
Pin Count
144
Max. Operating Frequency
96 MHz
Cpu
Cortex-M3
# Of Touch Channels
57
Hardware Qtouch Acquisition
No
Max I/o Pins
96
Ext Interrupts
96
Usb Transceiver
1
Quadrature Decoder Channels
1
Usb Speed
Hi-Speed
Usb Interface
Device
Spi
5
Twi (i2c)
2
Uart
5
Ssc
1
Sd / Emmc
1
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
384
Resistive Touch Screen
No
Temp. Sensor
No
Crypto Engine
No
Sram (kbytes)
50
Self Program Memory
YES
External Bus Interface
1
Dram Memory
No
Nand Interface
Yes
Picopower
No
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.8/3.3
Operating Voltage (vcc)
1.62 to 3.6
Fpu
No
Mpu / Mmu
Yes / No
Timers
3
Output Compare Channels
3
Input Capture Channels
3
Pwm Channels
4
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes
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Table 21-2.
21.4.3.2
6430E–ATARM–29-Aug-11
6430E–ATARM–29-Aug-11
Symbol
FL_ID
FL_SIZE
FL_PAGE_SIZE
FL_NB_PLANE
FL_PLANE[0]
...
FL_PLANE[FL_NB_PLANE-1]
FL_NB_LOCK
FL_LOCK[0]
...
Write Commands
Flash Descriptor Definition
ations to the EEFC_FRR register are done after the last word of the descriptor has been
returned, then the EEFC_FRR register value is 0 until the next valid command.
Several commands can be used to program the Flash.
Flash technology requires that an erase be done before programming. The full memory plane
can be erased at the same time, or several pages can be erased at the same time (refer to
ure 21-6, "Example of Partial Page
page erase can be automatically done before a page write using EWP or EWPL commands.
After programming, the page (the whole lock region) can be locked to prevent miscellaneous
write or erase sequences. The lock bit can be automatically set after page programming using
WPL or EWPL commands.
Data to be written are stored in an internal latch buffer. The size of the latch buffer corresponds
to the page size. The latch buffer wraps around within the internal memory area address space
and is repeated as many times as the number of pages within this address space.
Note:
Write operations are performed in a number of wait states equal to the number of wait states for
read operations.
Data are written to the latch buffer before the programming command is written to the Flash
Command Register EEFC_FCR. The sequence is as follows:
Two errors can be detected in the EEFC_FSR register after a programming sequence:
• Write the full page, at any page address, within the internal memory area address space.
• Programming starts as soon as the page number and the programming command are written
• When programming is completed, the FRDY bit in the Flash Programming Status Register
to the Flash Command Register. The FRDY bit in the Flash Programming Status Register
(EEFC_FSR) is automatically cleared.
(EEFC_FSR) rises. If an interrupt has been enabled by setting the bit FRDY in EEFC_FMR,
the corresponding interrupt line of the NVIC is activated.
Writing of 8-bit and 16-bit data is not allowed and may lead to unpredictable data corruption.
Word Index
0
1
2
3
4
4 + FL_NB_PLANE - 1
4 + FL_NB_PLANE + 1
4 + FL_NB_PLANE
Programming", and the paragraph below the figure.). Also, a
Description
Flash Interface Description
Flash size in bytes
Page size in bytes
Number of planes.
Number of bytes in the first plane.
Number of bytes in the last plane.
Number of lock bits. A bit is associated
with a lock region. A lock bit is used to
prevent write or erase operations in the
lock region.
Number of bytes in the first lock region.
SAM3U Series
SAM3U Series
Fig-
313
313
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