ATxmega256A3BU Atmel Corporation, ATxmega256A3BU Datasheet - Page 431

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ATxmega256A3BU

Manufacturer Part Number
ATxmega256A3BU
Description
Manufacturer
Atmel Corporation
Datasheets

Specifications of ATxmega256A3BU

Flash (kbytes)
256 Kbytes
Pin Count
64
Max. Operating Frequency
32 MHz
Cpu
8-bit AVR
# Of Touch Channels
16
Hardware Qtouch Acquisition
No
Max I/o Pins
47
Ext Interrupts
49
Usb Transceiver
1
Usb Speed
Full Speed
Usb Interface
Device
Spi
8
Twi (i2c)
2
Uart
6
Graphic Lcd
No
Video Decoder
No
Camera Interface
No
Adc Channels
16
Adc Resolution (bits)
12
Adc Speed (ksps)
2000
Analog Comparators
4
Resistive Touch Screen
No
Dac Channels
2
Dac Resolution (bits)
12
Temp. Sensor
Yes
Crypto Engine
AES/DES
Sram (kbytes)
16
Eeprom (bytes)
4096
Self Program Memory
YES
Dram Memory
No
Nand Interface
No
Picopower
Yes
Temp. Range (deg C)
-40 to 85
I/o Supply Class
1.6 to 3.6
Operating Voltage (vcc)
1.6 to 3.6
Fpu
No
Mpu / Mmu
no / no
Timers
7
Output Compare Channels
22
Input Capture Channels
22
Pwm Channels
22
32khz Rtc
Yes
Calibrated Rc Oscillator
Yes

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33.8
33.9
33.9.1
33.9.2
33.10 CRC Functionality
8331A–AVR–07/11
Protection of NVM
Preventing NVM Corruption
Write Corruption
Read Corruption
Alternative 1:
Alternative 2:
To protect the Flash and EEPROM memories from write and/or read, Lock Bits can be set to
restrict access from external programmers and the application software. Refer to
Nonolatile Memory Lock Bit Register” on page 29
and how to use them.
During periods when the V
result from a Flash memory read or write can be corrupt as supply voltage is too low for the CPU
and the Flash to operate properly.
To ensure that the voltage is enough during a complete write sequence to the Flash memory,
the BOD is automatically enabled at its configured level during chip erase and when the PDI is
enabled. For other programming operations, the POR threshold (V
depending on the programming operation, any of these Vcc voltage levels are reached, the pro-
gramming sequence will be aborted immediately. If this happens, the NVM programming should
be restarted when the power is sufficient again in case the write sequence failed or only partly
succeeded.
The NVM can be read incorrectly if the supply voltage is too low so the CPU execute instructions
incorrectly. To ensure that this does not happen, the BOD can be enabled.
It is possible to run an automatic Cyclic Redundancy Check (CRC) on the Flash Program Mem-
ory. When NVM is used to control the CRC module, an even number of bytes is read, at least in
the flash range mode. If the user selects a range with an odd number of bytes, an extra byte will
be read, and the checksum will not correspond to the selected range.
Refer to
• Fill the EEPROM page buffer with the selected number of bytes.
• Perform a EEPROM Page Erase.
• Perform a EEPROM Page Write.
• Fill the EEPROM page buffer with the selected number of bytes.
• Perform an atomic EEPROM Page Erase and Write.
”CRC - Cyclic Redundancy Check” on page 324
CC
voltage is below the minimum operating voltage for the device, the
for details on the available Lock Bit settings
Atmel AVR XMEGA AU
for more details.
POT+
) level used. If, and
”LOCKBITS –
431

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