PIC18F4431-I/P Microchip Technology Inc., PIC18F4431-I/P Datasheet - Page 89
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PIC18F4431-I/P
Manufacturer Part Number
PIC18F4431-I/P
Description
Microcontroller; 16 KB Flash; 768 RAM; 256 EEPROM; 36 I/O; 40-Pin-PDIP
Manufacturer
Microchip Technology Inc.
Datasheet
1.PIC18F4431-IP.pdf
(396 pages)
Specifications of PIC18F4431-I/P
A/d Inputs
9-Channel, 10-Bit
Cpu Speed
10 MIPS
Eeprom Memory
256 Bytes
Input Output
36
Interface
I2C/SPI/USART
Memory Type
Flash
Number Of Bits
8
Package Type
40-pin PDIP
Programmable Memory
16K Bytes
Ram Size
768 Bytes
Speed
40 MHz
Timers
1-8-bit, 3-16-bit
Voltage, Range
2-5.5 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
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7.3
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD con-
trol bit (EECON1<7>) and then set control bit RD
(EECON1<0>). The data is available for the very next
instruction cycle; therefore, the EEDATA register can
be read by the next instruction. EEDATA will hold this
value until another read operation, or until it is written to
by the user (during a write operation).
7.4
To write an EEPROM data location, the address must
first be written to the EEADR register and the data writ-
ten to the EEDATA register. The sequence in
Example 7-2 must be followed to initiate the write cycle.
The write will not begin if this sequence is not exactly
followed (write 55h to EECON2, write AAh to EECON2,
then set WR bit) for each byte. It is strongly recom-
mended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
EXAMPLE 7-1:
EXAMPLE 7-2:
2003 Microchip Technology Inc.
Required
Sequence
Reading the Data EEPROM
Memory
Writing to the Data EEPROM
Memory
MOVLW
MOVWF
BCF
BSF
MOVF
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
SLEEP
BCF
DATA_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, RD
EEDATA, W
DATA EEPROM READ
DATA EEPROM WRITE
DATA_EE_ADDR
EEADR
DATA_EE_DATA
EEDATA
EECON1, EEPGD
EECON1, WREN
INTCON, GIE
55h
EECON2
AAh
EECON2
EECON1, WR
INTCON, GIE
EECON1, WREN
;
; Data Memory Address to read
; Point to DATA memory
; EEPROM Read
; W = EEDATA
;
; Data Memory Address to write
;
; Data Memory Value to write
; Point to DATA memory
; Enable writes
; Disable Interrupts
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Enable Interrupts
; Wait for interrupt to signal write complete
; Disable writes
PIC18F2331/2431/4331/4431
Preliminary
After a write sequence has been initiated, EECON1,
EEADR and EEDATA cannot be modified. The WR bit
will be inhibited from being set unless the WREN bit is
set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM interrupt flag bit
(EEIF) is set. The user may either enable this interrupt
or poll this bit. EEIF must be cleared by software.
7.5
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
7.6
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared.
Also, the Power-up Timer (72 ms duration) prevents
EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch, or software malfunction.
Write Verify
Protection Against Spurious Write
DS39616B-page 87
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