JS28F512P33BFD Micron Technology Inc, JS28F512P33BFD Datasheet - Page 56

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JS28F512P33BFD

Manufacturer Part Number
JS28F512P33BFD
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of JS28F512P33BFD

Cell Type
NOR
Density
512Mb
Access Time (max)
105/17ns
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
25b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
32M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Supplier Unconfirmed

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Quantity
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Table 26: AC Write Specifications (Sheet 2 of 2)
Figure 24: Write-to-Write Timing
Datasheet
58
Write to Synchronous Read Specifications
W19
W20
W28
Write Specifications with Clock Active
W21
W22
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Num
Address [A]
Data [D/Q]
RST# [P]
WE# [W]
OE# [G]
CE# [E]
Write timing characteristics during erase suspend are the same as write-only operations.
A write operation can be terminated with either CE# or WE#.
Sampled, not 100% tested.
Write pulse width low (t
(whichever occurs first). Hence, t
Write pulse width high (t
(whichever occurs last). Hence, t
t
VPP and WP# should be at a valid level until erase or program success is determined.
This specification is only applicable when transiting from a write cycle to an asynchronous read. See spec W19 and W20
for synchronous read.
When doing a Read Status operation following any command that alters the Status Register, W14 is 20ns.
Add 10ns if the write operations results in a RCR or block lock status change, for the subsequent read operation to
reflect this change.
These specs are required only when the device is in a synchronous mode and clock is active during address setup phase.
These specs are required only when ADV# is used to latch address.
This specification must be complied with by customer’s writing timing. The result would be unpredictable if any violation
to this timing specification.
WHVH
t
t
t
t
t
WHCH/L
WHVH
WHVL
VHWL
CHWL
Symbol
or t
WHCH/L
W1
WE# high to Clock valid
WE# high to ADV# high
WE# high to ADV# low
ADV# high to WE# low
Clock high to WE# low
W2
must be met when transiting from a write cycle to a synchronous burst read.
WLWH
WHWL
or t
W5
or t
ELEH
WHWL
WLWH
EHEL
W3
W3
Parameter
) is defined from CE# or WE# low (whichever occurs last) to CE# or WE# high
) is defined from CE# or WE# high (whichever occurs first) to CE# or WE# low
= t
= t
W4
EHEL
ELEH
= t
= t
WHEL
WLEH
W7
W6
= t
= t
W8
EHWL
ELWH
W9
W9
).
.
W2
Min
19
19
7
-
-
W5
W3
W3
W4
Max
20
20
-
-
-
Order Number: 208043-05
Unit
ns
ns
ns
ns
ns
W7
W6
W8
1,2,3,6,10
1,2,3,11.1
P33-65nm
Notes
Apr 2010
,12
2

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