JS28F512P33BFD Micron Technology Inc, JS28F512P33BFD Datasheet - Page 16

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JS28F512P33BFD

Manufacturer Part Number
JS28F512P33BFD
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of JS28F512P33BFD

Cell Type
NOR
Density
512Mb
Access Time (max)
105/17ns
Interface Type
Parallel/Serial
Boot Type
Bottom
Address Bus
25b
Operating Supply Voltage (typ)
2.5/3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP
Program/erase Volt (typ)
8.5 to 9.5V
Sync/async
Async/Sync
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.3V
Operating Supply Voltage (max)
3.6V
Word Size
16b
Number Of Words
32M
Supply Current
31mA
Mounting
Surface Mount
Pin Count
56
Lead Free Status / RoHS Status
Supplier Unconfirmed

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5.0
Table 5:
5.1
Note:
5.2
Datasheet
18
Read
Write
Output Disable
Standby
Reset
Notes:
1.
2.
3.
Bus Operation
Asynchronous
Synchronous
Refer to the
operation.
X = Don’t Care (H or L).
RST# must be at V
Bus Operations Summary
Bus Operations
CE# low and RST# high enable device read operations. The device internally decodes
upper address inputs to determine the accessed block. ADV# low opens the internal
address latches. OE# low activates the outputs and gates selected data onto the I/O
bus.
Bus cycles to/from the P33-65nm device conform to standard microprocessor bus
operations.
the logic levels that must be applied to the device control signal inputs.
Read - Asynchronous Single Word Mode
To perform an asynchronous single word read, an address is driven onto the address
bus, and CE# is asserted. ADV# must be held low throughout the read cycle for TSOP
package. ADV# can either be driven high to latch the address or be held low
throughout the read cycle for Easy BGA package. WE# and RST# must already have
been deasserted. WAIT is set to a deasserted state during single word mode as
determined by RCR.10. CLK is not used for asynchronous single word reads, and is
ignored. After OE# is asserted, the data is driven onto DQ[15:0] after an initial access
time t
If only asynchronous reads are to be performed, CLK should be tied to a valid V
WAIT signal can be floated and ADV# must be tied to ground.
Refer to the following waveforms for more detailed information.
“Asynchronous Single-Word Read (ADV# Low)” on page
“Asynchronous Single-Word Read for Easy BGA (ADV# Latch)” on page
Read - Asynchronous Page Mode (Easy BGA)
To perform an asynchronous page read, an address is driven onto the address bus, and
CE# and ADV# are asserted. WE# and RST# must already have been deasserted.
WAIT is set to a deasserted state during asynchronous page mode and single word
mode as determined by RCR.10. ADV# can be driven high to latch the address, or it
must be held low throughout the read cycle. CLK is not used for asynchronous page-
mode reads, and is ignored. After OE# is asserted, the data is driven onto DQ[15:0]
after an initial access time t
-” on page
Table 7, “Command Bus Cycles” on page 23
AVQV
RST#
SS
V
V
V
V
V
V
IH
IH
IH
IH
IH
IL
± 0.2V to meet the maximum specified power-down current.
or t
53).
Table 5, “Bus Operations Summary”
GLQV
Running
CLK
X
X
X
X
X
delay. (See
ADV#
X
X
X
L
L
L
AVQV
Table 25, “AC Read Specifications -” on page
or t
CE#
H
L
L
X
L
L
GLQV
delay. (See
OE#
H
H
X
X
L
L
for valid DQ[15:0] during a write
summarizes the bus operations and
WE#
Table 25, “AC Read Specifications
H
H
H
X
X
L
54, and
Deasserted
High-Z
High-Z
High-Z
High-Z
Driven
WAIT
Figure 18,
Figure 19,
Order Number: 208043-05
DQ[15:0]
55.
Output
Output
High-Z
High-Z
High-Z
Input
53).
P33-65nm
IH
Apr 2010
Notes
level,
2,3
1
2
2

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