JS28F512P33BFD Micron Technology Inc, JS28F512P33BFD Datasheet - Page 38

• Manufacturer Part Number: JS28F512P33BFD
• Manufacturer: Micron Technology Inc

Specifications of JS28F512P33BFD

• Cell Type: NOR
• Density: 512Mb
• Access Time (max): 105/17ns
• Interface Type: Parallel/Serial
• Boot Type: Bottom
• Address Bus: 25b
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 8.5 to 9.5V
• Sync/async: Async/Sync
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.3V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 32M
• Supply Current: 31mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 11: Example Latency Count Setting Using Code 3
11.2.3
Figure 12: End of Wordline Timing Diagram
Datasheet
40
A [Max :1 ]
D Q[15 :0 ]
C LK
A D V#
W A IT
OE#
A[MAX:0]
A[MAX:1]
D[15:0]
End of Word Line (EOWL) Considerations
The delay may occur when a burst sequence access crosses a 16-word boundary. That
is, A[4:1] of start address does not equal 0x0.
Diagram” on page 40
the first 16-word boundary is reached. The number of data words and the number of
WAIT states is summarized in
Comparison” on page 41
ADV#
CLK
CE#
Latency C ount
illustrates the end of wordline WAIT state(s), which occur after
0
for both P33-130nm and P33-65nm devices.
Code 3
Table 15, “End of Wordline Data and WAIT state
1
High-Z
R103
Address
D ata
Figure 12, “End of Wordline Timing
2
D ata
3
EOW L
t
Data
Order Number: 208043-05
Data
4
D ata
P33-65nm
Apr 2010