FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 77

• Manufacturer Part Number: FQI12N60CTU
• Description: MOSFET N-CH 600V 12A I2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQI12N60CTU

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2290pF @ 25V
• Power - Max: 3.13W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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MOSFET and Schottky Diodes
FDFS6N303
FDFS2P106A
FDFS2P103
FDFS2P103A
FDFS2P102
FDFS2P102A
FDFC3N108
FDC6392S
FDW6923
SO-8 N-Channel
SO-8 P-Channel
SSOT-6 N-Channel
SSOT-6 P-Channel
TSSOP-8 P-Channel
Products
V
DS
-60
-30
-30
-20
-20
-20
-20
30
20
(V)
I
D
5.3
5.3
3.3
3.3
2.2
3.5
6
3
3
(A)
0.035
0.059
0.059
0.125
0.125
10V
0.11
–
–
–
R
DS(on)
Max (Ω) V
0.055
0.092
0.092
0.045
4.5V
0.14
0.07
0.15
0.2
0.2
2-72
Discrete Power Products –
GS
0.095
0.075
=
2.5V
0.2
–
–
–
–
–
–
Bold = New Products (introduced January 2003 or later)
(nC)
5.3
5.7
3.5
2.1
3.5
3.7
9.7
12
15
Q
G
@ V
4.5
4.5
4.5
4.5
4.5
10
GS
5
5
5
MOSFETs and Schottky Diodes
(V)
V
0.449
0.42
0.58
0.57
0.35
0.58
0.58
0.45
F
0.5
Schottky Diode
(V)
@ I
0.25
F
3
2
1
2
2
2
1
2
(A)
P
D
0.96
0.96
1.2
2
2
2
2
2
2
(W)