FQI12N60CTU Fairchild Semiconductor, FQI12N60CTU Datasheet - Page 147
FQI12N60CTU
Manufacturer Part Number
FQI12N60CTU
Description
MOSFET N-CH 600V 12A I2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQI3N25TU.pdf
(214 pages)
Specifications of FQI12N60CTU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2290pF @ 25V
Power - Max
3.13W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQI12N60CTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
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Bridge Rectifiers (Continued)
KBL08
KBL10
KBPM
2KBP005M
2KBP01M
2KBP02M
2KBP04M
2KBP06M
2KBP08M
2KBP10M
3N246
3N247
3N248
3N249
3N250
3N251
3N252
3N253
3N254
3N255
3N256
3N257
3N258
3N259
KBP005M
KBP01M
KBP02M
KBP04M
KBP06M
KBP08M
KBP10M
KBU
KBU4A
KBU4B
KBU4D
KBU4G
Products
V
RRM
1000
1000
1000
1000
1000
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
600
800
100
200
400
50
50
50
50
50
(V)
I
F(AV)
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
4
4
2
2
2
2
2
2
2
2
2
2
2
2
2
2
4
4
4
4
2-142
(A)
Discrete Power Products –
V
FM
Max (V)
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.1
1.1
1.1
1.1
1.1
1.1
1.1
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1
1
1
1
Diodes and Rectifiers
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